Impact of the Grain Size and Orientation of SrBi_2(Ta,Nb)_2O_9 Films on the Polarization for Nano-Scale FeRAMs
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
TANAKA K.
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
-
SHIMADA Y.
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd
-
Kaibara K.
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
UCHIYAMA K.
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
関連論文
- Tinv Scaling and Jg Reducing for nMOSFET with HfSi_x/HfO_2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process
- Overview and Future Challenge of FeRAM Technologies
- Impact of the Grain Size and Orientation of SrBi_2(Ta,Nb)_2O_9 Films on the Polarization for Nano-Scale FeRAMs