Low Temperature Recovery of Ru/(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Yabuta H.
Functional Materials Research Labs. Nec Corporation
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IIZUKA T.
ULSI Device Development Lab., NEC Corporation
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ARITA K.
ULSI Device Development Lab., NEC Corporation
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YAMAMOTO I.
ULSI Device Development Lab., NEC Corporation
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YAMAMICHI S.
Functional Materials Research Labs., NEC Corporation
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YAMAGUCHI H.
ULSI Device Development Lab., NEC Corporation
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MATSUKI T.
ULSI Device Development Lab., NEC Corporation
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SONE S.
ULSI Device Development Lab., NEC Corporation
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MIYASAKA Y.
Functional Materials Research Labs., NEC Corporation
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KATO Y.
ULSI Device Development Lab., NEC Corporation
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Yamamichi S.
Functional Materials Research Labs. Nec Corporation
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Miyasaka Y.
Functional Materials Research Labs. Nec Corporation
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Matsuki T.
Ulsi Device Development Lab. Nec Corporation
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Arita K.
Ulsi Device Development Lab. Nec Corporation
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Iizuka T.
Ulsi Device Development Lab. Nec Corporation
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Iizuka T.
Ulsi Device Development Division Nec Corporation
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Sone S.
Ulsi Device Development Lab. Nec Corporation
関連論文
- Low Temperature Recovery of Ru/(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid