Preparation and Properties of Novel Intergrowth System of BiS(VS_2)_n (1≦n≦15)

概要

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Ternary sulfides of BiS(VS2)n (1 ≤ n ≤ 15) were prepared by heating the elemental mixtures in evacuated silica tubes at 1073 K. X-ray diffraction and electron diffraction measurements showed that BiS(VS2)1.50 has a misfit layer structure, where the BiS layers are randomly lacked from the known misfit layer sulfide of (BiS)1.16VS2. BiS(VS2)1.50 has a good conduction, showing a phase transition around 150 K possibly due to the CDW instability. The conduction of BiS(VS2)1.50 was interpreted by the electron donation from BiS into the semiconductive VS2. BiS(VS2)1.50 showed an antiferromagnetic ordering at ca. 30 K, and has a fairly small effective magnetic moments suggesting the strong itinerancy. It was found that the compounds of BiS(VS2)n with 3 ≤ n ≤ 15 have the intergrowth structures composed of BiS(VS2)3 and VS2 phases. Such a great variety of composite materials have never been investigated so far.
社団法人粉体粉末冶金協会の論文
2008-03-15