Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates

スポンサーリンク

概要

• 論文の詳細を見る

• We studied the variations of electrical characteristics induced by bias stress on low-temperature polycrystalline silicon (LTPS) p-channel thin film transistors (TFTs) fabricated on metal foil. The transfer characteristics resulted quite stable upon application of prolonged bias stress, whereas the output characteristics presented a reduction of kink-effect. These results have been explained by using a self-consistent model based on the trapping of hot electrons, generated by impact ionisation and injected near drain contact, at both front (gate oxide/channel) and back (substrate/channel) interfaces.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-30

著者

• Fortunato Guglielmo

  Ifn-cnr

• Mariucci Luigi

  Ifn-cnr

• Templier Francois

  Cea-leti Department Ihs

• Gaucci Paolo

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

• Valletta Antonio

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

• Gaucci Paolo

  Ifn-cnr

• Valletta Antonio

  Ifn-cnr

関連論文

• Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates
• Polymorphous Silicon : A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

スポンサーリンク