Polymorphous Silicon : A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

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概要

• 論文の詳細を見る

• Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than µc-Si: H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si: H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si: H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si: H and a-Si: H materials, in the TFT device configuration. Pm-Si: H appears to be very suitable for low cost and high performance AM-OLED fabrication.

• （社）電子情報通信学会の論文
• 2010-10-01

著者

• Templier Francois

  Cea-leti Minatec

• Templier Francois

  Cea-leti Department Ihs

• Cooper David

  Cea-leti Minatec

• Brochet Julien

  Cea-leti Minatec

• Roca I

  Lpicm Ecole Polytechnique Cnrs

• AVENTURIER Bernard

  CEA-LETI Minatec

• ABRAMOV Alexey

  LPICM, Ecole Polytechnique, CNRS

• DAINEKA Dmitri

  LPICM, Ecole Polytechnique, CNRS

• Daineka Dmitri

  Lpicm Ecole Polytechnique Cnrs

• Abramov Alexey

  Lpicm Ecole Polytechnique Cnrs

関連論文

• Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates
• Polymorphous Silicon : A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

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