Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam

概要

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The etching damage induced by energy-controlled oxygen ion beam exposure on diamond was observed using electron spin resonance (ESR) and X-ray photoelectron spectroscopy (XPS). The ion energy was controlled by an extraction voltage ($V_{\text{ext}}$) ranging from 25 to 500 V. Oxygen ion beam exposure gives rise to a highly defective structure (with a spin concentration of ${\sim}10^{20}$ cm-3) observed by ESR, in which the number of defects increased with increasing $V_{\text{ext}}$. XPS measurements show that its structure is similar to that of amorphous carbon (a-C). Angle-resolved XPS showed that the defective layer existed in the surface region and its thickness was estimated to be 0.6 and 1.0 nm for $V_{\text{ext}}$ values of 250 and 500 V, respectively. The step treatment of oxygen ion beam exposure, where $V_{\text{ext}}$ and etching time were changed step by step, was proposed as an effective diamond etching method with lower etching damage in the region within 1 nm from the top surface and shorter etching time. It was also found that this method shows the removal of more etching damage than an acid treatment.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-01-15