Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO_2 Gate Dielectrics
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Kwong D.
Microelectronics Research Center Department Of Electrical & Computer Engineering And Materials S
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HAN L.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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MIN B.
Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Scien
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BHAT M.
Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Scien
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CHO T.
Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Scien
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JOSHI A.
Rockwell Telecommunications
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MANN R.
Rockwell Telecommunications
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CHUNG L.
Rockwell Telecommunications
関連論文
- Highly Reliable Ultra Thin Gate Dielectrics for Dual-Gate CMOS Devices
- Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO_2 Gate Dielectrics