Highly Reliable Ultra Thin Gate Dielectrics for Dual-Gate CMOS Devices
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Kwong D.
Microelectronics Research Center Department Of Electrical & Computer Engineering And Materials S
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Kwong D.
Microelectronics Research Center Department Of Electrical And Computer Engineering University Of Tex
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HAN L.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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WRISTERS D.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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CHEN T.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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LIN C.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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CHEN K.
Microelectronics Research Center, Department of Electrical and Computer Engineering University of Te
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FULFORD J.
Advanced Micro Devices
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Wristers D.
Microelectronics Research Center Department Of Electrical And Computer Engineering University Of Tex
関連論文
- Highly Reliable Ultra Thin Gate Dielectrics for Dual-Gate CMOS Devices
- Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO_2 Gate Dielectrics