Application of SiOF Film Deposited Using TEOS/TEFS/O_2 System to Multi-Level Interconnection Designed with 0.25μm Rule
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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KUDO Hiroshi
Thin Film Technology Dept., Process Dev.Div., Fujitsu Ltd.
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Shimizu Atsuo
Process Integration Department Process Development Division Fujitsu Limited
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SATHO Yukihiro
Process Integration Department, Process Development Division, Fujitsu Limited
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MIYAZAWA Hisashi
Process Integration Department, Process Development Division, Fujitsu Limited
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HARADA Hideki
Process Integration Department, Process Development Division, Fujitsu Limited
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Satho Yukihiro
Process Integration Department Process Development Division Fujitsu Limited
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Harada Hideki
Process Integration Department Process Development Division Fujitsu Limited
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Miyazawa Hisashi
Process Integration Department Process Development Division Fujitsu Limited
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Kudo Hiroshi
Thin Film Technology Department Process Development Division Fujitsu Limited
関連論文
- Densified SiOF Film Formation for Preventing Water Absorption
- Densified SiOF Film Formation for Preventing Water Absorption
- Application of SiOF Film Deposited Using TEOS/TEFS/O_2 System to Multi-Level Interconnection Designed with 0.25μm Rule
- Densified SiOF Film Formation for Preventing Water Absorption