Advanced Ti Salicide Technology for High Performance Quarter-Micron Logic LSIs
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Suenaga Jun
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
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Tajima Kazuhiro
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
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SUMI Hirofumi
MOS Process Department, Semiconductor Company, Sony Corp.
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Sumi Hirofumi
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
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HORIUCHI Atsushi
MOS Process dept., MOS LSI div., Semiconductor Company, Sony Corporation
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KANNO Michihiro
MOS Process dept., MOS LSI div., Semiconductor Company, Sony Corporation
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OKAMOTO Yutaka
MOS Process dept., MOS LSI div., Semiconductor Company, Sony Corporation
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Kanno Michihiro
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
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Horiuchi Atsushi
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
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Okamoto Yutaka
Mos Process Dept. Mos Lsi Div. Semiconductor Company Sony Corporation
関連論文
- Characteristics of TiN Films Sputtered under Optimized Conditions of Metallic Mode Deposition
- Advanced Ti Salicide Technology for High Performance Quarter-Micron Logic LSIs