A Novel P-Channel Flash EEPROM Cell with Simple Process and Low Power Consumption
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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WU Auter
Technology and Process Development Division, United Microelectronics Corp.
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LIU Fu-Tai
Technology and Process Development Division, United Microelectronics Corp.
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Liu Fu-tai
Technology And Process Development Division United Microelectronics Corporation
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Liu Fu-tai
Technology And Process Development Division United Microelectronics Corp.
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HUANG C.
Technology Development Dept., Macronix International Co.
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LIU Y.
Technology and Process Development Division, United Microelectronics Corporation
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HONG S.
Technology and Process Development Division, United Microelectronics Corporation
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WANG M.
Technology and Process Development Division, United Microelectronics Corporation
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HSU Sungmu
Technology and Process Development Division, United Microelectronics Corporation
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HSIA L.
Technology and Process Development Division, United Microelectronics Corporation
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CHANG Y.
Technology and Process Development Division, United Microelectronics Corporation
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LO Y.
Technology and Process Development Division, United Microelectronics Corporation
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Hsu Sungmu
Technology And Process Development Division United Microelectronics Corporation
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Wu Auter
Technology And Process Development Division United Microelectronics Corporation
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Wu Auter
Technology And Process Development Division United Microelectronics Corp.
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Wang M.
Technology And Process Development Division United Microelectronics Corporation
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Lo Y.
Technology And Process Development Division United Microelectronics Corporation
関連論文
- A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric
- A Comparative Study of Interface Trap Induced Drain Leakage Current in Various n-MOSFET Structures
- A Novel P-Channel Flash EEPROM Cell with Simple Process and Low Power Consumption
- A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric