A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

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概要

著者

Wang Mu-chun
Technology And Process Development Division United Microelectronics Corp.
HUANG Chih-Jen
Technology and Process Development Division, United Microelectronics Corp.
LIU Yun-Chang
Technology and Process Development Division, United Microelectronics Corp.
CAYWOOD John
Consultant, Sub Micron Circuits Inc.
HONG Shi-Fang
Technology and Process Development Division, United Microelectronics Corp.
WU Auter
Technology and Process Development Division, United Microelectronics Corp.
HSIA Liang-Chu
Technology and Process Development Division, United Microelectronics Corp.
CHANG Yi-Jao
Technology and Process Development Division, United Microelectronics Corp.
LIU Fu-Tai
Technology and Process Development Division, United Microelectronics Corp.
Liu Fu-tai
Technology And Process Development Division United Microelectronics Corp.
Wu Auter
Technology And Process Development Division United Microelectronics Corp.
Caywood John
Consultant Sub Micron Circuits Inc.
Chang Yi-jao
Technology And Process Development Division United Microelectronics Corp.
Hong Shi-fang
Technology And Process Development Division United Microelectronics Corp.
Liu Yun-chang
Technology And Process Development Division United Microelectronics Corp.
Hsia Liang-chu
Technology And Process Development Division United Microelectronics Corp.
Huang Chih-jen
Technology And Process Development Division United Microelectronics Corp.

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