Infrared Photodetector with Self-Organized InAs Quantum Dots
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Kim Jongwook
Research Center For Electronic Materials & Components Dept. Of Ee. Hanyang University
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Hong Songcheol
Opto-electronics Research Center Dept. Of Ee. Kaist
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Hong Songcheol
Opto-electronic Research Center Department Of Electrical Engineering Korea Advanced Institute Of Sci
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Cho Taehee
Opto-electronics Research Center Dept. Of Ee. Kaist
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OH Jaeung
Research Center for Electronic Materials & Components, Dept. of EE., Hanyang University
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CHOE Jungwoo
Dept. of Physics, College of natural science, Kyunghee University
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Oh Jaeung
Research Center For Electronic Materials & Components Dept. Of Ee. Hanyang University
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Choe Jungwoo
Dept. Of Physics College Of Natural Science Kyunghee University
関連論文
- Theoretical Comparison of (111) and (100) GaAs/AlGaAs p-Type Quantum Well Infrared Photodetectors
- Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector
- A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure
- Infrared Photodetector with Self-Organized InAs Quantum Dots
- Noise Parameter Extraction of a GaAs MESFET with Monte-Carlo Simulation
- Study of Quasi-Two-Dimensional Hole Gas in Si/SixGe1-x/Si Quantum Wells