A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure
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概要
- 論文の詳細を見る
We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at λ= 10.5μm at T = 80 K. We also found that the device exhibits bias-dependent responsivity.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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KIM Jong-Wook
Center for Electronic Materials & Components, Department of Electrical Engineering, Hanyang Universi
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OH Jae-Eung
Center for Electronic Materials & Components, Department of Electrical Engineering, Hanyang Universi
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Choe Jeong-woo
Department Of Physics College Of Natural Science Kyung Hee University
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Oh Jae-eung
Center For Electronic Materials & Components Dept. Of Ee. Hanyang University
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Kim Jong-wook
Center For Electronic Materials & Components Dept. Of Ee. Hanyang University
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CHO Taehee
Opto-Electronics Research Center, Department of Electrical Engineering, Korea Advanced Institute of
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HONG Songcheol
Opto-Electronics Research Center, Department of Electrical Engineering, Korea Advanced Institute of
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Hong Songcheol
Opto-electronics Research Center Dept. Of Ee. Korea Advanced Institute Of Science And Technology
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Hong Songcheol
Opto-electronic Research Center Department Of Electrical Engineering Korea Advanced Institute Of Sci
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Cho Taehee
Opto-electronics Research Center Dept. Of Ee. Korea Advanced Institute Of Science And Technology
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Cho Taehee
Opto-electronics Research Center Dept. Of Ee. Kaist
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