Study of Quasi-Two-Dimensional Hole Gas in Si/SixGe1-x/Si Quantum Wells
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概要
- 論文の詳細を見る
Quasi-two-dimensional hole gas in strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schr$\ddot{\mbox{o}}$dinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m0 at T = 4 K. High quality Si/Si0.8Ge0.2/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as ∼10,400 cm2/V·s with a sheet carrier concentration of ∼1.1 ×1012 cm-2 and an effective mass of ∼0.30 m0 is obtained at T = 4 K.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Hong Songcheol
Opto-electronic Research Center Department Of Electrical Engineering Korea Advanced Institute Of Sci
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Cheon Sanghoon
Opto-Electronic Research Center, Department of Electrical Engineering,
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Lee Seungchang
Electronics and Telecommunications Research Institute,
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Yoo Kyeonghwa
Korea Research Institute of Standards and Science,
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Yoo Kyeonghwa
Korea Research Institute Of Standards And Science
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Cheon Sanghoon
Opto-electronic Research Center Department Of Electrical Engineering Korea Advanced Institute Of Sci
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Lee Seungchang
Electronics And Telecommunications Research Institute
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- Study of Quasi-Two-Dimensional Hole Gas in Si/SixGe1-x/Si Quantum Wells