Effects of Ge Doping on Micromorphology of MnSi in MnSi_<-1.7> and on Their Thermoelectric Transport Properties
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-30
著者
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Mukoujima Mika
Research Center Komatsu Ltd.
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Eremin Ivan
A. F. Ioffe Physico-technical Institute Russian Academy Of Sciences
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TSUJI Toshihide
School of Materials Science, Japan Advanced Institute of Science and Technology
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Aoyama Ikuto
Research Center, Komatsu Ltd., Manda 1200, Hiratsuka, Kanagawa 254-8567, Japan
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Sano Seijiro
Research Center, Komatsu Ltd., Manda 1200, Hiratsuka, Kanagawa 254-8567, Japan
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FEDOROV Mikhail
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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ZAITSEV Vladimir
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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SOLOMKIN Fedor
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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SAMUNIN Aleksandr
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
関連論文
- Synergy Effect of Simultaneous Zinc and Nickel Addition on Cobalt Deposition onto Stainless Steel in Oxygenated High Temperature Water
- Doping Effects on Thermoelectric Properties of Higher Manganese Silicides (HMSs, MnSi1.74) and Characterization of Thermoelectric Generating Module using $ p$-Type (Al, Ge and Mo)-doped HMSs and $n$-Type Mg2Si0.4Sn0.6 Legs
- Effects of Ge Doping on Micromorphology of MnSi in MnSi_ and on Their Thermoelectric Transport Properties
- Effects of Ge Doping on Micromorphology of MnSi in MnSi∼ 1.7 and on Their Thermoelectric Transport Properties