ZAITSEV Vladimir | A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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概要
- Zaitsev Vladimir K.の詳細を見る
- 同名の論文著者
- A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciencesの論文著者
関連著者
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Mukoujima Mika
Research Center Komatsu Ltd.
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Eremin Ivan
A. F. Ioffe Physico-technical Institute Russian Academy Of Sciences
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FEDOROV Mikhail
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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ZAITSEV Vladimir
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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SAMUNIN Aleksandr
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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TSUJI Toshihide
School of Materials Science, Japan Advanced Institute of Science and Technology
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Tsuji Toshihide
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Aoyama Ikuto
Research Center, Komatsu Ltd., Manda 1200, Hiratsuka, Kanagawa 254-8567, Japan
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Sano Seijiro
Research Center, Komatsu Ltd., Manda 1200, Hiratsuka, Kanagawa 254-8567, Japan
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SOLOMKIN Fedor
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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Solomkin Fedor
A. F. Ioffe Physico-technical Institute Russian Academy Of Sciences
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Aoyama Ikuto
Research Center Komatsu Ltd.
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Sano Seijiro
Research Center Komatsu Ltd.
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Fedorov Mikhail
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
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Tsuji Toshihide
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Sano Seijiro
Research Center, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan
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Aoyama Ikuto
Research Center, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan
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Solomkin Fedor
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
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Samunin Aleksandr
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
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Zaitsev Vladimir
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
著作論文
- Effects of Ge Doping on Micromorphology of MnSi in MnSi_ and on Their Thermoelectric Transport Properties
- Effects of Ge Doping on Micromorphology of MnSi in MnSi∼ 1.7 and on Their Thermoelectric Transport Properties