Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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Moon Hong-joon
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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KIM Seong-Goo
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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HYUN Chang-Suk
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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PARK Don
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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CHO Tai-Heui
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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KIM Hyun-Chul
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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JUNG Jae-Hwang
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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KIM Sun-Joon
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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KANG Hyuck-Jin
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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JEONG Sang-Moo
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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LEE Si-Woo
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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LEE Sung-Hyun
Fab 3 Team, Memory Division, Samsung Electronics Co., Ltd.
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SUK Jong-Gyu
Fab 3 Team, Memory Division, Samsung Electronics Co., Ltd.
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JEON Young-Soo
Fab 3 Team, Memory Division, Samsung Electronics Co., Ltd.
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JEON Sang-Kil
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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HONG Hyeong-Sun
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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LEE Kang-Yoon
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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OH Kyung-Seok
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
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Cho Tai-heui
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Lee Kang-yoon
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Lee Si-woo
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Kang Hyuck-jin
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Park Don
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Jeon Sang-kil
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
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Jeong Sang-moo
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
関連論文
- Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
- Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide