Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

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概要

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• Epitaxial Al-polarity AlN films were deposited on (0001) sapphire using a metalorganic chemical vapor deposition process involving a modulated ammonia/trimethyl aluminum flow, a pressure reduction from 150 Torr to 40 Torr after the first stage of growth, and growing the first ${\sim}0.1$ μm of AlN at a moderate V/III ratio, followed by a switch to low V/III for the remainder of the growth. Smooth, flat epitaxial films with a full width half maximum of the X-ray rocking curves as low as 177 arcseconds/650 arcseconds for the (0002)/($10\bar{1}2$) reflections were obtained.

• Japan Society of Applied Physicsの論文
• 2005-01-10

著者

• PADUANO Qing

  Air Force Research Laboratory

• WEYBURNE David

  Air Force Research Laboratory

関連論文

• The Energy Band Gap of Al_xGa_N
• Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AIN Films on Sapphire
• Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

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