Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• Simoen Eddy

  Imec

• RAFI Joan

  IMEC

• MERCHA Abdelkarim

  IMEC

• HAYAMA Kiyoteru

  IMEC

• CLAEYS Cor

  IMEC

関連論文

• Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
• Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

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