Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
-
Simoen Eddy
Imec
-
RAFI Joan
IMEC
-
CLAEYS Cor
IMEC
-
NEIMASH Vlad
Institute of Physics, National Academy of Science of Ukraine
-
KRAITCHINSKII Anatolii
Institute of Physics, National Academy of Science of Ukraine
-
TISCHENKO Valerii
Institute of Physics, National Academy of Science of Ukraine
-
VOITOVYCH Vasyl
Institute of Physics, National Academy of Science of Ukraine
-
VERSLUYS Jorg
Department of Solid-State Sciences, Ghent University
-
CLAUWS Paul
Department of Solid-State Sciences, Ghent University
関連論文
- Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
- Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon