プラズマCVDによるa-Si系薄膜製膜時のイオン衝撃の影響

概要

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Effects of ion bombardment on a-Si and a-SiGe film deposition have been studied by a large-area solar cell production equipment using plastic film substrates. We propose that a ratio between peak-to-peak voltage (Vpp) of electrodes and deposition pressure (P) gives information about ion damage during the film deposition. Single-junction a-Si solar cells were fabricated under conditions with various Vpp/P, and photovoltaic properties of the solar cells were measured in order to evaluate the dependence on Vpp/P. Conversion efficiency of the solar cells is strongly dependent on Vpp/P, which validates our ion damage model. The ion damage model is effective on both a-Si and a-SiGe film growth processes.
2004-09-01