Simulation of Three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• Maruyama Takahiro

  Materials Science And Engineering Meijo University

• NARITSUKA Shigeya

  Materials Science and Engineering, Meijo University

• OKADA Masahide

  Materials Science and Engineering, Meijo University

関連論文

• Numerical Model for Oxygen Incorporation into AlGaAs Layer Grown by Molecular Beam Epitaxy
• Simulation of Three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates
• Simulation of Three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates

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