Fully Depleted SOI Complementary MOS Device with Raised Source/Drain for 90nm Embedded Static RAM Technology
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Oh Myung
Technology Development Team System Lsi Division Samsung Electronics
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Kim Young
Technology Development Team System Lsi Division Samsung Electronics
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Kang Hee
Technology Development Team System Lsi Division Samsung Electronics
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PARK Chang
Technology Development Team, System LSI Division, Samsung Electronics
-
OH Chang
Technology Development Team, System LSI Division, Samsung Electronics
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JUNG Mu
Technology Development Team, System LSI Division, Samsung Electronics
関連論文
- Fully Depleted SOI Complementary MOS Device with Raised Source/Drain for 90nm Embedded Static RAM Technology
- Fully Depleted SOI Complementary MOS Device with Raised Source/Drain for 90 nm Embedded Static RAM Technology