Voltage-Controlled Emission Wavelength Switching in a Pseudomorphic Si1-xGex/Si Double Quantum Well

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概要

• 論文の詳細を見る

• Voltage-controlled emission wavelength switching (VCEWS) is demonstrated in a pseudomorphic Si1-xGex/Si double quantum well (DQW). Under cw excitation, photoluminescence (PL) of the DQW was found to exhibit a clear switchover of emission wavelengths under longitudinal electric field, where an extinction ratio of more than 100 was obtained. In the time domain, antiphase oscillations of PL decays synchronized with the polarity switch of driving voltages were observed. The unique band line-up of pseudomorphic Si1-xGex/Si QWs which makes loosely bound electrons susceptible to longitudinal electric fields underlies the operation of VCEWS.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Fukatsu S.

  Graduate School Of Arts And Sciences The University Of Tokyo

• Yasuhara Nozomu

  Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902, Japan

• Yasuhara Nozomu

  Graduate School Of Arts And Sciences The University Of Tokyo

関連論文

• Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well : Semiconductors
• Voltage-Controlled Emission Wavelength Switching in a Pseudomorphic Si1-xGex/Si Double Quantum Well

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