Nanoscale MOSFET with Split-Gate Design for RF/Analog Application
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
-
WOO Jason
Department of Electrical Engineering, University of California
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Yuan Jun
Department Of Materials Science And Engineering Tsinghua University
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Yuan Jun
Department Of Electrical Engineering University Of California
関連論文
- Inherent Suppression of Low-Frequency Noise Overshoot in Sub-Micron Partially-Depleted Floating Body Silicon-On-Sapphire (SOS) MOSFETs
- High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si
- Theoretical electron energy-loss spectroscopy and its application in materials research
- Nanoscale MOSFET with Split-Gate Design for RF/Analog Application
- Distortion Analysis of SOI MOSFETs for Analog Applications
- Nanoscale MOSFET with Split-Gate Design for RF/Analog Application