Quantitative analysis of static capacitance contrast in scanning electron microscopy
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概要
- 論文の詳細を見る
- 2003-10-01
著者
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Zhang Hai-bo
Department Of Electronic Science And Technology Xi'an Jiaotong University
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Zhang Hai-bo
Department Of Electronic Science And Technology And Key Laboratory For Physical Electronics And Devi
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Ura Katsumi
Osaka University
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Ura Katsumi
Osaka Sangyou University
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FENG Ren-Jian
Department of Electronic Science and Technology, Xi'an Jiaotong University
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Feng Ren-jian
Department Of Electronic Science And Technology Xi'an Jiaotong University
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ZHANG Hai-Bo
Department of Electronic Science and Technology, Xi'an Jiaotong University
関連論文
- The top-bottom effect of a tilted thick specimen and its influence on electron tomography
- Influence of the image quality deterioration of a tilted thick specimen on electron tomography
- Quantitative analysis of static capacitance contrast in scanning electron microscopy
- Contrast mechanism of negatively charged insulators in scanning electron microscope
- Static capacitance contrast of LSI covered with an insulator film in low accelerating voltage scanning electron microscope
- Measurement of electron transmission through tilted thick specimens with an ultrahigh voltage electron microscope
- Initialization by erasing the surface potential of negatively charged insulators in scanning electron microscope (SEM) observation