Field Dependence of Electron Spin Relaxation during Transport in GaAs
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Sato Yuuki
Crest Japan Science And Technology Agency
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KAWAGUCHI Hitoshi
CREST, Japan Science and Technology Agency
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TAKAHASHI Yutaka
CREST, Japan Science and Technology Agency
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KAWAMURA Yuichi
CREST, Japan Science and Technology Agency
関連論文
- A Spin Drag Effect in Temperature Dependence of Spin-Polarized Electron Mobilities
- Feasibility of Observing a Spin Drag Effect in the Electronic Transport
- Field Dependence of Electron Spin Relaxation during Transport in GaAs
- 10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL
- Optical Buffer Memory Using Polarization-Bistable Vertical-Cavity Surface-Emitting Lasers
- Polarization Bistable Characteristics of Mesa Structure 980 nm Vertical-Cavity Surface-Emitting Lasers
- Polarization Bistable Characteristics of 1.55 μm Vertical-Cavity Surface-Emitting Lasers
- Field Dependence of Electron Spin Relaxation during Transport in GaAs
- Spin Drag Effect in Temperature Dependence of Spin-Polarized Electron Mobilities