Field Dependence of Electron Spin Relaxation during Transport in GaAs
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概要
- 論文の詳細を見る
We investigated the electric field dependence of electron spin relaxation during transport in GaAs at 10 K. Spin polarizations of photogenerated electrons were measured before and after drifting in the 2 μm region of GaAs under photoluminescence from quantum wells. We have found direct evidence that the electron spin relaxation during the drift is accelerated in the higher electric field.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Sato Yuuki
Crest Japan Science And Technology Agency
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TAKAHASHI Yutaka
CREST, Japan Science and Technology Agency
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KAWAMURA Yuichi
CREST, Japan Science and Technology Agency
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Kawaguchi Hitoshi
Crest Japan Science And Technology Agency
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Kawamura Yuichi
CREST, Japan Science and Technology Agency, 4-1-8 Honmachi, Kawaguchi, Saitama 332-0012, Japan
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