Characterization of Trap States at Silicon-On Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Morikawa Takitaro
Bio-nanoelectronics Research Center Toyo University
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Tomita Hideki
Bio-nanoelectronics Research Center Toyo University
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NAKAJIMA Yoshikata
Bio-nanoelectronics Research Center, Toyo University
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AOTO Kenichi
Bio-nanoelectronics Research Center, Toyo University
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ITO Nobuhiro
Bio-nanoelectronics Research Center, Toyo University
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HANAJIRI Tatsuro
Bio-nanoelectronics Research Center, Toyo University
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TOYABE Toru
Bio-nanoelectronics Research Center, Toyo University
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SUGANO Takuo
Bio-nanoelectronics Research Center, Toyo University
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Toyabe Toru
Bio-nanoelectronics Research Center Toyo University
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Aoto Kenichi
Bio-nanoelectronics Research Center Toyo University
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Ito Nobuhiro
Bio-nanoelectronics Research Center Toyo University
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Nakajima Yoshikata
Bio-nanoelectronics Research Center Toyo University
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Hanajiri Tatsuro
Bio-nanoelectronics Research Center Toyo University
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Sugano Takuo
Bio-nanoelectronics Research Center Toyo University
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Nakajima Yoshikata
Bio-Nano Electronics Research Center, Toyo University, Kujirai 2100, Kawagoe, Saitama 350-8585, Japan
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Toyabe Toru
Bio-Nano Electronics Research Center, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Hanajiri Tatsuro
Bio-Nano Electronics Research Center, Toyo University, Kujirai 2100, Kawagoe, Saitama 350-8585, Japan
関連論文
- Characterization of Trap States at Silicon-On Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
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- Ultraviolet Irradiation Effects on and Depth Profiles in X-ray Photoelectron Spectra of Poly(vinylpyridine) Thin Films