Toyabe Toru | Bio-nanoelectronics Research Center Toyo University
スポンサーリンク
概要
関連著者
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Toyabe Toru
Bio-nanoelectronics Research Center Toyo University
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Toyabe Toru
Bio-Nano Electronics Research Center, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Morikawa Takitaro
Bio-nanoelectronics Research Center Toyo University
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Tomita Hideki
Bio-nanoelectronics Research Center Toyo University
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NAKAJIMA Yoshikata
Bio-nanoelectronics Research Center, Toyo University
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AOTO Kenichi
Bio-nanoelectronics Research Center, Toyo University
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ITO Nobuhiro
Bio-nanoelectronics Research Center, Toyo University
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HANAJIRI Tatsuro
Bio-nanoelectronics Research Center, Toyo University
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TOYABE Toru
Bio-nanoelectronics Research Center, Toyo University
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SUGANO Takuo
Bio-nanoelectronics Research Center, Toyo University
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Aoto Kenichi
Bio-nanoelectronics Research Center Toyo University
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Ito Nobuhiro
Bio-nanoelectronics Research Center Toyo University
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Nakajima Yoshikata
Bio-nanoelectronics Research Center Toyo University
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Hanajiri Tatsuro
Bio-nanoelectronics Research Center Toyo University
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Sugano Takuo
Bio-nanoelectronics Research Center Toyo University
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Sugawara Akira
Bio-Nano Electronics Research Center, Toyo University
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WADA Yasuo
Bio-Nano Electronics Research Center, Toyo University
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Sugawara Akira
Bio-Nano Electronics Research Center, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Ishikawa Yoshinori
Bio-Nano Electronics Research Center, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Nakajima Yoshikata
Bio-Nano Electronics Research Center, Toyo University, Kujirai 2100, Kawagoe, Saitama 350-8585, Japan
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Wada Yasuo
Bio-Nano Electronics Research Center, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Hanajiri Tatsuro
Bio-Nano Electronics Research Center, Toyo University, Kujirai 2100, Kawagoe, Saitama 350-8585, Japan
著作論文
- Characterization of Trap States at Silicon-On Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
- A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure