吸引方式を用いた光散乱法によるプラズマ CVD 中の real-time 粒子測定

概要

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Monitoring of particles generated in a process chamber is one of the effective means to control the semiconductor manufacturing process. A sampling probe is inserted into the process chamber during the reaction in order to monitor the particles generated by plasma enhanced chemical vapor deposition (PECVD) with a light scattering particle sensor. As a result, it is found that the factors such as plasma power, discharge time, process pressure, and material gas flow rate significantly influence the number of particles generated in the chamber. It is also shown that the particle size distribution varies drastically by the particle coagulation and that PECVD with modulation discharge plasma is effective in controlling gas phase particle generation without lowering the deposition rate.
2002-06-20