Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down

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概要

• 論文の詳細を見る
• 1992-02-25

著者

• Kuroda Shigeki

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Nishi Kenji

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

関連論文

• A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
• Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
• Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures
• Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down

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