Profile Control of SiO _2 Trench Etching for Damascene Interconnection Process
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
-
Yoshida Yuichi
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
-
Seki Satoru
Department Of Applied Physics Tokai University
-
SEKINE Makoto
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
-
HAYASHI Hisataka
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
-
YOSHIDA Yukimasa
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
-
SETA Shoji
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
-
Seta Shoji
Telecom System Lsi Departmenti Network & Telecom System Lsi Division Toshiba Corporation
関連論文
- Side Chain Length Dependence of Optical Properties of Polyanions Based on Poly(p-phenylenevinylene) and Their Self-Assembled Multilayer Structures
- Photopumped Laser Oscillation and Charge Carrier Mobility of Composite Films Based on Poly(3-hexylthiophene)s with Different Stereoregularity
- 希土類型水素貯蔵合金の水素吸収における反応速度論的研究
- ニッケル水素電池用水素貯蔵合金の水素化特性に表面汚染が及ぼす影響
- ニッケル水素電池用水素貯蔵合金の水素吸収反応特性の評価に関する研究
- Ulcerative pigmented squamous cell carcinoma in a 101-year-old Japanese woman
- Microtrench Generation in SiO_2 Trench Etching for Damascene Interconnection Process
- Unidirectional Laser Emission from Spiral Microcavity Utilizing Conducting Polymer
- Lasing of Poly(3-alkylthiophene) in Microcapillary Geometry
- Multicolor Luminescence Properties of π-Conjugated Oligomer with Salicylideneaniline Moieties
- Optical Properties of Self-Assembled Thin Film of Poly(p-phenylenevinylene)s and Its Application to Light-Emitting Devices with Microdisk Geometry
- Preparation and Optical Properties of n-Type Alternating Copolymer with π-Conjugation : Atoms, Molecules, and Chemical Physics
- Parallel-Plate Type Holey-Plate Plasma Source
- Profile Control of SiO _2 Trench Etching for Damascene Interconnection Process
- Dual Damascene Etching Process Using Sacrificial Spin-on-Glass Film : Nuclear Sciences, Plasmas, and Electric Discharges
- LaNi_5-H系の水素固溶限近傍領域における平衡水素吸収反応
- 水素エネルギー利用関連技術の展望 : エネルギー新世紀への挑戦
- LaNi_5-H系の低濃度領域における水素溶解反応
- 水素固溶体領域におけるLaNi_5-H系の熱力学的考察
- Profile Control of SiO2 Trench Etching for Damascene Interconnection Process