Dual Damascene Etching Process Using Sacrificial Spin-on-Glass Film : Nuclear Sciences, Plasmas, and Electric Discharges

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概要

• 論文の詳細を見る

• The dual damascene (DD) formation process for sub 0.2μm feature size devices has been investigated. The via-first DD process, where via holes are first formed, followed by trench formation, used the antireflection film in via holes after the trench pattern lithography process. In subsequential trench etch process, crownlike etch residues of SiO_2 were formed around via holes due to etch inhibiting effect of antireflection films in via holes. As pin-on-glass (SOG) film is filled in via holes as a sacrificial film before trench pattern lithography was used. It could eliminate the crownlike etch residues because of the absence of an antireflection film in via holes. Moreover, it could give via holes a rounded profile at their top edges. This DD process used for fabricating films with no etch residues and rounded via holes reduces the aspect ratio of via holes and was confirmed to be effective for subsequential metal filling process.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Seki Satoru

  Department Of Applied Physics Tokai University

• Ohiwa Tokuhisa

  Advanced Ulsi Process Engineering Department Process And Manufacturing Engineering Center Toshiba Co

• YOSHIDA Yukimasa

  Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co

• Seta Shoji

  Telecom System Lsi Departmenti Network & Telecom System Lsi Division Toshiba Corporation

• SETA Shoji

  Telcom System LSI Department I, Newwork & Telecom System LSI Division, Toshiba Corporation

• NAKATA Renpei

  Advanced ULSI Process Engineering Department, Process and Manufacturing Engineering Center, Toshiba

• Seta S

  Toshiba Corp. Kawasaki Jpn

• Nakata Renpei

  Advanced Ulsi Process Engineering Department Process And Manufacturing Engineering Center Toshiba Co

• Yoshida Y

  Advanced Ulsi Process Engineering Department Process And Manufacturing Engineering Center Toshiba Co

• Yoshida Yukimasa

  Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba

関連論文

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• ニッケル水素電池用水素貯蔵合金の水素吸収反応特性の評価に関する研究
• Microtrench Generation in SiO_2 Trench Etching for Damascene Interconnection Process
• Profile Control of SiO _2 Trench Etching for Damascene Interconnection Process
• Dual Damascene Etching Process Using Sacrificial Spin-on-Glass Film : Nuclear Sciences, Plasmas, and Electric Discharges
• LaNi_5-H系の水素固溶限近傍領域における平衡水素吸収反応
• 水素エネルギー利用関連技術の展望 : エネルギー新世紀への挑戦
• LaNi_5-H系の低濃度領域における水素溶解反応
• 水素固溶体領域におけるLaNi_5-H系の熱力学的考察
• Profile Control of SiO2 Trench Etching for Damascene Interconnection Process

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