Preferential Growth of Al (110) Films on GaAs (100) Surfaces under Rapid Vapor Deposition in Ordinary High Vacuum
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2000-09-20
著者
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SUGAWARA Shigeo
Department of Materials Science and Engineering, Faculty of Engineering and Resourc Science, Akita U
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Sugawara Shigeo
Department Of Materials Science And Engineering Faculty Of Engineering And Resource Science Akita Un
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Sugawara Shigeo
Deparment Of Materials Science And Engineerling Faculty Of Engineering And Resource Science Akita Un
関連論文
- Unique Shapes of Micro-Pits Formed in an Al-Pd-Mn Icosahedral Quasicrystal by Anodic Etching
- Determination of Quasi-Crystallographic Orientations of Al-Pd-Mn Icosahedral Phase by Means of Light Figure Method
- Faceted Etch Pits Formed on Surfaces of an Icosahedral Al_Pd_Mn_ Quasicrystal
- Formation of Whiskers at Dislocation Sites of n-Type GaP Surface during Anodic Etching
- Formation of Abnormal Etch Pits on (111)p Surface of n-GaP Crystal
- Transmission Electron Microscopy and Atomic Force Microscopy Studies of an Al-Pd-Mn Thin Film Prepared by a Combined Technique of Vacuum Deposition and Thermal Annealing
- Chemical Etching of {111} Surfaces of GaAs Crystals in H_2SO_4-H_2O_2-H_2O System : Semiconductors
- Anodic Dissolution of n-GaP (111) Surface in Aqueous KOH solutions
- Preferential Growth of Al (110) Films on GaAs (100) Surfaces under Rapid Vapor Deposition in Ordinary High Vacuum
- Etch Spirals Formed at Screw-Dislocation Sites on (111) Surface of Cu Crystal by Etching with Marukawa's Solution
- Epitaxial Growth of Al(100)Films under High Rate Deposition on Cleaved NaCl Crystals
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- Transmission Electron Microscopy and Atomic Force Microscopy Studies of an Al–Pd–Mn Thin Film Prepared by a Combined Technique of Vacuum Deposition and Thermal Annealing