Preparation and Properties of Mgln_2O_4 Films by Reactive Evaporation

概要

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MgIn2O4 films were reactively deposited with assistance of rf discharge at an oxygen pressure of 4 × 10-2 Pa and at a substrate temperature between room temperature and 550°C. The dependence of the structure of the films and their physical properties on the substrate temperature was studied. It was found that crystallized films were deposited at 250 and 350°C, while films were almost amorphous at room temperature. The crystallinity of the films was also reduced at and above 450°C because of deviation of the film composition from stoichiometry. The crystallized films were highly transparent with an average transmission of about 80 %, and by heat treatment in H2 gas, became very conductive having a resistivity of about 8 × 10-2Ωcm.
社団法人粉体粉末冶金協会の論文
2000-04-15