Influence of Rf Power on Structure and Physical Properties of Reactively Evaporated Zn_2In_2O_5 Films
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概要
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Zn<SUB>2</SUB>In<SUB>2</SUB>O<SUB>5</SUB> films were reactively deposited with assistance of rf discharge in the oxygen pressure of 3×10<SUP>-2</SUP> Pa and at substrate temperatures of room temperature and 320°C. The applied rf power was varied from 0-450W. The influence of the rf power on the film structure and the physical properties was studied. At 320°C, crystallized films could be deposited at and above 100W, while at 25°C, the films were crystallized above 300W. The crystallized films deposited at 320°C and at 100-250W exhibited the highest electrical conductance with the resistivity of below 10<SUP>-3</SUP>Ωcm and the excellent light transmittance of averagely 85% in the visible light range. The optical band gap for the films was determined. The value was in the range of 3.42-3.58eV.
- 社団法人 粉体粉末冶金協会の論文
- 2002-07-15
著者
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Muranaka Shigetoshi
Faculty Of Integrated Human Studies Kyoto University
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Shigematsu Toshihiko
Faculty Of Science Konan University
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