Reactive Deposition of In_2O_3 Films on In_2O_3 Substrates
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概要
- 論文の詳細を見る
Indium oxide films were reactively deposited on the indium oxide substrates at room temperature. The influence of the substrate on the film structure and the physical properties was studied. The structure of the films was greatly dependent of the freshness of the substrate surface. On the fresh substrates, crystallized films could be deposited, while films were almost amorphous on the air-exposed substrates. The disordered structure of the films was ascribed to contamination of the substrate surface with water vapor. The electrical and optical properties of the films were also described.
- 社団法人 粉体粉末冶金協会の論文
- 1996-07-15
著者
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Muranaka Shigetoshi
Faculty Of Integrated Human Studies Kyoto University
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Muranaka Shigetoshi
Faculty Of Intergrated Human Studies Kyoto University
関連論文
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- Structure and Some Physical Properties of In_2O_3 Films Deposited on In_2O_3 Substrates
- Preparation and Properties of Mgln_2O_4 Films by Reactive Evaporation
- Preparation and Properties of Zn_2In_2O_5 Films by Reactive Evaporation
- Deposition of Indium Oxide Films on CeO_2 Substrates
- Reactive Deposition of In_2O_3 Films on In_2O_3 Substrates
- Moessbauer Studies of Reactively Deposited Tin Oxide Films.