ラジカルビーム源を用いたパルスレーザー堆積法による窒化炭素薄膜の合成と評価

概要

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Carbon nitride (CNx ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N2 gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N2. N 1s XPS spectra show the existence of N-sp2C and N-sp3C bonds in the films. The fraction of N-sp3C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-spC (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-sp2C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.
日本真空協会の論文
2000-03-20