Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-06-01

著者

• Furuya Hisashi

  Mitsubishi Materials Silicon Corporation

• HARADA Kazuhiro

  Mitsubishi Materials Silicon Corporation

• KIDA Michio

  Mitsubishi Materials Corporation Central Research Institute

関連論文

• Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth
• Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals
• Defects in the Oxidation-Induced Stacking Fault Ring Region in Czochralski Silicon Crystal
• Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth

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