HARADA Kazuhiro | Mitsubishi Materials Silicon Corporation
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概要
関連著者
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HARADA Kazuhiro
Mitsubishi Materials Silicon Corporation
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Furuya Hisashi
Mitsubishi Materials Silicon Corporation
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KIDA Michio
Mitsubishi Materials Corporation Central Research Institute
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Harada Kazuhiro
Mitsubishi Materials Silicon Corporation, 314 Kaneuchi, Nishisangao, Noda, Chiba 278, Japan
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Ono Naoki
Mitsubishi Materials Silicon Corporation Technology Division
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Ono Naoki
Mitsubishi Materials Corp. Silicon Research Center
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SHIMANUKI Yasushi
Mitsubishi Materials Silicon Corporation
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PUZANOV Nikolai
Podolsk Chemical-Metallurgical Plant
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EIDENZON Anna
Podolsk Chemical-Metallurgical Plant
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PUZANOV Dmitri
Podolsk Chemical-Metallurgical Plant
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FURUKAWA Jun
Mitsubishi Materials Silicon Corporation, Technology Division
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Shimanuki Yasushi
Mitsubishi Materials Silicon Corporation Technology Division
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Shimanuki Yasushi
Mitsubishi Materials Corp. Silicon Research Center
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Furukawa Jun
Mitsubishi Materials Silicon Corporation Technology Division
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Harada Kazuhiro
Mitsubishi Materials Silicon Corporation Production Division
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Tanaka Hideo
Mitsubishi Materials Corporation Central Research Institute, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan
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Watanabe Toshihiko
Mitsubishi Materials Corporation Central Research Institute, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan
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Kida Michio
Mitsubishi Materials Corporation Central Research Institute, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan
著作論文
- Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth
- Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals
- Defects in the Oxidation-Induced Stacking Fault Ring Region in Czochralski Silicon Crystal
- Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth