Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth

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概要

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• The formation of oxidation induced stacking fault (OSF) nuclei during Czochralski silicon crystal growth was investigated using crystals subjected to in situ annealing for either 1 or 4 hours by halt of pulling during crystal growth. The effects of in situ annealing at temperatures from about 1160° C to 1030° C can be summarized as follows. In positions held at about 1090° C and 1030° C, the radial distributions of OSFs, LSTDs (light scattering tomography defects), and OPs (oxygen precipitates after annealing) changed greatly. In the position held at about 1090° C, large LSTDs were formed but the OSF-ring disappeared in the region where it should have been present if pulling was not halted. In the position held at about 1030° C, the defects in the OSF-ring grew, its width increased, and the OP density both inside and outside the OSF-ring decreased with holding time. However, the radial distribution of defects at the position held at about 1160° C was similar to that for a reference crystal which was not subjected to halt of pulling. These results indicate that these defects were not formed until 1160° C, the large LSTDs were formed at 1160–1090° C, the OSF nuclei were formed at 1090–1030° C, and the OP nuclei inside and outside the OSF-ring were formed below 1030° C. We discussed the influence of point defects upon the formation of OSF nuclei.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-06-15

著者

• Furuya Hisashi

  Mitsubishi Materials Silicon Corporation

• HARADA Kazuhiro

  Mitsubishi Materials Silicon Corporation

• KIDA Michio

  Mitsubishi Materials Corporation Central Research Institute

• Harada Kazuhiro

  Mitsubishi Materials Silicon Corporation, 314 Kaneuchi, Nishisangao, Noda, Chiba 278, Japan

• Kida Michio

  Mitsubishi Materials Corporation Central Research Institute, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan

関連論文

• Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth
• Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals
• Defects in the Oxidation-Induced Stacking Fault Ring Region in Czochralski Silicon Crystal
• Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal Growth

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