Extremely Low ON-resistance Metal-to-Metal Antifuses with Al–Cu/10 nm-thick p-SiNx/Al–Cu Structure for Next Generation Very High Speed FPGAs (Field Programmable Gate Arrays)

概要

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We present a novel metal-to-metal antifuse structure consisting of a plasma enhanced CVD (chemical vapor deposition) silicon nitride (p-SiNx) dielectric film sandwiched between two aluminum layers. The leakage current in the off-state is markedly reduced by using aluminum film as the upper electrode instead of Ti (titanium) or TiN (titanium nitride) film. A Al–Cu/10 nm-thick p-SiNx/Al–Cu structure antifuse provides sufficient long-term off-state reliability exceeding ten years at 3.6 V while keeping low breakdown voltage (10 V). An extremely low on-resistance of around 3 Ω and a narrow distribution are also realized. A new antifuse structure (Al–Cu/p-SiNx/Al–Cu(100 nm)/Ti/TiN/Al–Cu) highly compatible with the conventional via formation process in double metal interconnect wiring is proposed. This type of antifuse structure is very promising for next-generation very high-speed FPGAs.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1996-02-28