スポンサーリンク
Yamagata Research Institute of Technology, Yamagata 990-2473, Japan | 論文
- Characterization of Top-Gate Effects in Amorphous InGaZnO Thin-Film Transistors Using a Dual-Gate Structure
- Depth-Profiling Study on Amorphous Indium--Gallium--Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy
- Depth-Profiling Study on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)