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VLSI Research and Development Center, Oki Electric Industry Company, Ltd. | 論文
- A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
- Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
- Design Techniques for High-Throughput BiCMOS Self-Timed SRAM's (Special Section on the 1992 VLSI Circuits Symposium)
- New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors