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United Microelectronics Corp., Technology Development Division | 論文

• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• A Novel Shallow Trench Isolation with Mint-Spacer Technology
• High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
• A Novel Shallow Trench Isolation with Mini-Spacer Technology

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