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Ulsi Process Technology Development Center Matsushita Electronics | 論文
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance