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ULSI Research Laboratories, Research and Development Center, Toshiba Corporation | 論文
- Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
- Hg-Sensitized Photochemical Vapor Depositiorn Application to Hydrogenated Amorphous Silicon Photoconversion Layer Overlaid on Charge Coupled Device
- High-Definition Television (HDTV) Solid State Image Sensors (Special Issue on Opto-Electronics and LSI)
- In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
- A New High-Density Plasma Etching System Using A Dipole-Ring Magnet
- Control of Single-Electron Device Using Environmental Impedance Modulation
- Effect of Electronic States of Electrodes on Coulomb Blockade
- Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films