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ULSI Device Development Division, NEC Electron Devices, NEC Corporation | 論文
- Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs
- Indium Profile Control for Super Steep Retrograde (SSR) Well
- Lateral Diffusion Distance Measurement for 40-80nm Junctions by Etching/TEM-EELS Method